This Edition provides all the required information for a course in modern device electronics taken by undergraduate electrical engineers. Offers major new coverage of silicon technology, adds several topics in basic semiconductor physics not treated previously, and introduces Hall-effect sensors. The chapters on MOSFET have been entirely updated, focusing on mobility variations and threshold-voltage dependence. Additional topics include VLSI devices, short channel effects, and computer modeling.

Table of Contents

1 Semiconductor Electronics
1.1 Physics of Semiconductor Materials
1.2 Free Carriers in Semiconductors
1.3 Device: Hall-Effect Magnetic Sensor
2 Silicon Technology
2.1 The Silicon Planar Process
2.2 Crystal Growth
2.3 Thermal Oxidation
2.4 Lithography and Pattern Transfer
2.5 Dopant Addition and Diffusion
2.6 Chemical Vapor Deposition
2.7 Interconnection and Packaging
2.8 Compound-Semiconductor Processing
2.9 Numerical Simulation
2.10 Device: Integrated-Circuit Resistor
3 Metal-Semiconductor Contacts
3.1 Equilibrium in Electronic Systems
3.2 Idealized Metal-Semiconductor Junctions
3.3 Current-Voltage Characteristics
3.4 Nonrectifying (Ohmic) Contacts
3.5 Surface Effects
3.6 Metal-Semiconductor Devices: Schottky Diodes
4 pn Junctions
4.1 Graded Impurity Distributions
4.2 The pn Junction
4.3 Reverse-Biased pn Junctions
4.4 Junction Breakdown
4.5 Device: Junction Field-Effect Transistors
5 Currents in pn Junctions
5.1 Continuity Equation
5.2 Generation and Recombination
5.3 Current-Voltage Characteristics of pn Junctions
5.4 Charge Storage and Diode Transients
5.5 Device Modeling and Simulation
5.6 Devices
6 Bipolar Transistors I: Basic Properties
6.1 Transistor Action
6.2 Active Bias
6.3 Transistor Switching
6.4 Ebers-Moll Model
6.5 Devices: Planar Bipolar Amplifying and Switching Transistor
6.6 Devices: Heterojunction Bipolar Transistors
7 Bipolar Transistors II: Limitations and Models
7.1 Effects of Collector Bias Variation (Early Effect)
7.2 Effects at Low and High Emitter Bias
7.3 Base Transit Time
7.4 Charge-Control Model
7.5 Small-Signal Transistor Model
7.6 Frequency Limits of Bipolar Transistors
7.7 Bipolar Transistor Model for Computer Simulation
7.8 Devices: pnp Transistors
8 Properties of the Metal-Oxide-Silicon System
8.1 The Ideal MOS Structure
8.2 Analysis of the Ideal MOS Structure
8.3 MOS Electronics
8.4 Capacitance of the MOS System
8.5 Non-Ideal MOS System
8.6 Surface Effects on pn Junctions
8.7 MOS Capacitors and Charge-Coupled Devices
9 MOS Field-Effect Transistors I: Physical Effects and Models
9.1 Basic MOSFET Behavior
9.2 Improved Models for Short-Channel MOSFETs
9.3 Devices: Complementary MOSFETs - CMOS
9.4 Looking Ahead
10 MOS Field-Effect Transistors II: High-Field Effects
10.1 Electric Fields in the Velocity-Saturation Region
10.2 Substrate Current
10.3 Gate Current
10.4 Device Degradation
10.5 Devices: MOS Nonvolatile Memory Structures
Answers to Selected Problems
Selected List of Symbols
Index