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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

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Description

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

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Product Details

  • Sep 25, 2023 Pub Date:
  • 0367554151 ISBN-10:
  • 9780367554156 ISBN-13:
  • English Language