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Reliability Of Power Gallium Nitride Based Transistors

by Reliability Of Power Gallium Nitride Based Transistors

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Description

In this cutting-edge study, Denis Marcon examines the reliability of power gallium nitride (GaN) based transistors. Using advanced simulation techniques and experimental data, he develops new models for predicting the reliability of these devices under various operating conditions. This book will be of particular interest to researchers and engineers working on power electronics and related fields.

This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it.

This work is in the "public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.

Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

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Product Details

  • Legare Street Press Brand
  • Jul 18, 2023 Pub Date:
  • 9781021177858 ISBN-13:
  • 1021177857 ISBN-10:
  • English Language
  • 9.21 in * 0.47 in * 6.14 in Dimensions:
  • 1 lb Weight: